MRF18090AS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18090A/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. GSM and EDGE Performances, Full Frequency Band Power Gain — 13.5 dB (Typ) @ 90 Watts (CW) Efficiency — 52% (Typ) @ 90 Watts (CW) Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters MRF18090A MRF18090AS 1.80 – 1.88 GHz, 90 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETS CASE 465B–03, STYLE 1 (NI–880) (MRF18090A) CASE 465C–02, STYLE 1 (NI–880S) (MRF18090AS) MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 +15, –0.5 250 1.43 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal...