MRF184

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large–signal, common source amplifier applications in 28 volt base station equipment. Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% Characterized with Series Equivalent Large–Signal D Impedance Parameters S–Parameter Characterization at High Bias Levels Excellent Thermal Stability Capable of Handling 30:1 VSWR @ 28 Vdc, 945 MHz G MRF184 MRF184S 60 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–01, STYLE 1 (MRF184) CASE 360C–03, STYLE 1 (MRF184S) S MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS ID PD Tstg TJ Value 65 ± 20 7 118 0.9 – 65 to +150 200 Unit Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.1 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 V, ID = 1 mAdc) Zero Gate Voltage Drain C...