MRF187R3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. 1.0 GHz, 85 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs LIFETIME BUY CASE 465–06, STYLE 1 NI–780 MRF187 CASE 465A–06, STYLE 1 NI–780S MRF187SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC ≥ 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±20 15 250 1.43 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.70 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage fro...