Power Transistors
2SB1148, 2SB1148A
Silicon PNP epitaxial planar type
For low-voltage switching Complementary to 2SD17...
Power
Transistors
2SB1148, 2SB1148A
Silicon
PNP epitaxial planar type
For low-voltage switching Complementary to 2SD1752 and 2SD1752A
7.0±0.3 3.0±0.2
Unit: mm
3.5±0.2
7.2±0.3 0.8±0.2
s Features
q Low collector to emitter saturation voltage VCE(sat) q High-speed switching q I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB1148 base voltage 2SB1148A
VCBO
–40 –50
V
Collector to 2SB1148 emitter voltage 2SB1148A
VCEO
–20 –40
V
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VEBO ICP IC
PC
Tj Tstg
–7 –20 –10 15 1.3 150 –55 to +150
V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SB1148
current
2SB1148A
Emitter cutoff current
Collector to emitter 2SB1148
voltage
2SB1148A
ICBO IEBO VCEO
VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0
IC = –10mA, IB = 0
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
hFE1 hFE2* VCE(sat) VBE(sat) fT Cob ton tstg tf
VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A IC = –10A, IB = – 0.33A IC = –10A, IB = – 0.33A VCE = –10V, IC = – 0.5A, f = 10MHz VCB = –10V...