SD1411

SD1411 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 40 VOLTS IMD − 30 dB COMMON EMITTER GOLD METALLIZATION POUT = 200 W MIN. WITH 16 dB GAIN .400 x .425 6LFL (M153) epoxy sealed ORDER CODE SD1411 BRANDING SD1411 PIN CONNECTION DESCRIPTION The SD1411 is a silicon NPN transistor designed for telecommunications in HF and VHF frequency bands. This device utilizes gold metallized die with diffused emitter resistors to achieve high reliability and ruggedness. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 110 55 4.0 40 330 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 0.36 °C/W 1/3 SD1411 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCER BVCEO BVEBO ICES hFE IC = 200mA IC = 200mA IC = 200mA IC = 200mA IE = 20mA VCE = 45V VCE = 6V IE = 0mA VBE = 0V RBE = 10Ω IB = 0mA IC = 0mA IE = 0mA IC = 10A 110 110 100 55 4.0 — 15 — — — — — — — — — — — — 20 80 V V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD COB f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz VCE = 40 V VCE = 40 V VCE = 40 V VCB = 50 V ICQ = 150 mA ICQ = 150 mA ICQ = 150 mA 200 16 — — — — — — — — −30 3...