FLM3135-4F
C-Band Internally Matched FET FEATURES
High Output Power: P1dB = 36.5dBm (Typ.) High Gain: G1dB = 12.0dB (Typ.) High PAE: ηadd = 38% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for ...
