FLM8596-15F

FLM8596-15F X-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.5dB(Typ.) ・High PAE: ηadd=32%(Typ.) ・Broad Band: 8.5~9.6GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W oC oC Recommended Operating Condition(Case Temperature Tc=25OC) Item DC Input Voltage Gate Current Gate Current Symbol VDS IGS IGR RG=50Ω RG=50Ω Condition Limit Unit V mA mA ≤10 ≤16.7 ≥-3.62 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G Rth ∆Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=2.4A VDS=5V, IDS=240mA IGS=-300µA Min. -0.5 -5.0 41.0 6.5 - Limit Typ. 7.2 4500 -1.5 42.0 7.5 4.0 32 2.3 - Max. 10.8 -3.0 5.0 1.2 2.6 100 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise VDS=10V f=8.5 - 9.6 GHz IDS=0.5Idss Zs=ZL=50Ω Channel to Case 10V X Idsr X Rth C/W o C CASE STYLE: IB ESD Class Ⅲ 2000...