KMZ10B

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D329 KMZ10B Magnetic field sensor Product specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1998 Mar 31 Philips Semiconductors Product specification Magnetic field sensor DESCRIPTION The KMZ10B is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear position measurement, proximity detectors, etc. PINNING PIN 1 2 3 4 SYMBOL +VO GND −VO VCC DESCRIPTION output voltage ground output voltage supply voltage 1 2 3 4 MGD806 KMZ10B handbook, halfpage Hy Hx Fig.1 Simplified outline SOT195. QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage − −2 − − 1.6 −1.5 MIN. 5 − 3 4 − − TYP. 12 +2 − − 2.6 +1.5 MAX. V kA/m kA/m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM handbook, full pagewidth MLC716 1 +VO 2 GND 3 –VO 4 VCC Fig.2 Simplified circuit diagram. 1998 Mar 31 2 Philips Semiconductors Product specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage total power dissipation storage temperature bridge operating temperature up to Tamb = 130 °C C...