KMZ11B1

DISCRETE SEMICONDUCTORS DATA SHEET KMZ11B1 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 08 File under Discrete Semiconductors, SC17 1996 Dec 11 Philips Semiconductors Preliminary specification Magnetic field sensor DESCRIPTION The KMZ11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field measurement, revolution counters, angular or linear displacement sensors, proximity detectors, etc. The sensor can be operated at any frequency between DC and 1 MHz. PINNING PIN 1 2 3 4 5 to 8 SYMBOL +VO GND −VO VCC n.c. DESCRIPTION output voltage ground output voltage supply voltage not connected pin 1 index KMZ11B1 8 handbook, halfpage 5 Hy Hx 1 4 MGD804 Fig.1 Simplified outline. QUICK REFERENCE DATA SYMBOL VCC Hy Hx S Rbridge Voffset PARAMETER bridge supply voltage magnetic field strength auxiliary field sensitivity bridge resistance offset voltage − −2 − − 1.9 −1.5 MIN. 5 − 3 4 − − TYP. − +2 − − 2.9 +1.5 MAX. V kA/m kA/m mV ⁄ V ---------------kA ⁄ m kΩ mV/V UNIT CIRCUIT DIAGRAM MLC716 handbook, full pagewidth 1 +VO 2 GND 3 –VO 4 VCC Fig.2 Simplified circuit diagram. 1996 Dec 11 2 Philips Semiconductors Preliminary specification Magnetic field sensor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCC Ptot Tstg Tbridge PARAMETER bridge supply voltage tota...