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MSG33001

Panasonic Semiconductor
Part Number MSG33001
Manufacturer Panasonic Semiconductor
Description Transistor
Published Dec 28, 2005
Detailed Description Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.33+0.05 –0.02 0.10+0.05 –0.02 Unit: mm ■ Features • C...
Datasheet PDF File MSG33001 PDF File

MSG33001
MSG33001

Overview
Transistors MSG33001 SiGe HBT type For low-noise RF amplifier 0.
33+0.
05 –0.
02 0.
10+0.
05 –0.
02 Unit: mm ■ Features • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature package 0.
8 mm × 1.
2 mm (height 0.
52 mm) 3 0.
15 min.
0.
80±0.
05 1.
20±0.
05 0.
52±0.
03 0 to 0.
01 5˚ (0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05 5˚ 0.
15 min.
0.
23+0.
05 –0.
02 1 2 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VC...


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