Transistors
MSG43004
SiGe HBT type
For low-noise RF amplifier
0.60±0.05
Unit: mm
■ Features
Compatible between high breakdown voltage and high cut-off frequency Low noise, high-gain amplification Optimal size reduction and high level integration for ultra-small packages
3
2
1 1.00±0.05
0.39+0.01 −0.03
0.15±0.05 0.05±0.03 0.35±0.01
0.25±0.05
0.5...
