17N80C2

www.DataSheet4U.com Preliminary data SPP17N80C2 SPB17N80C2 Cool MOS™ Power Transistor Feature · · · · · · · C O OLMOS Power Semiconductors New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunity P-TO263-3-2 Product Summary VDS R DS(on) ID 800 290 17 V mW A Type SPP17N80C2 SPB17N80C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4353 Q67040-S4354 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by T jmax Avalanche energy, single pulse ID=4A, V DD=50V Avalanche energy, repetitive t AR limited by Tjmax1) ID=17A, VDD=50V w w w t a .D S a e h U 4 t e Marking Symbol .c m o P-TO220-3-1 SPP17N80C2 SPB17N80C2 Value 17 11 51 670 0.5 17 6 ±20 208 -55... +150 Unit A ID ID puls EAS EAR IAR dv/dt mJ Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS=17A, V DS < V DD, di/dt=100A/µs, T jmax=150°C A V/ns V W °C Gate source voltage Power dissipation TC = 25 °C VGS Ptot Tj , Tstg Page 1 Operating and storage temperature w w w ta a D .2000-05-29 e h S 4 et U o .c m www.DataSheet4U.com Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6...