POWEREX
MITSUBISHI SEMICONDUCTOR <
TRANSISTOR ARRAY>
M63804P/FP/GP/KP
7-UNIT 300mA
TRANSISTOR ARRAY
PIN CONFIGURATION
IN1→ 1
16 → O1
DESCRIPTION M63804P, M63804FP, M63804GP and M64804KP are seven-circuit Singe
transistor arrays. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low inputcurrent supply.
IN2→ 2
15 → O2
14 → O3
IN3→ 3
INPUT
IN4→ 4
13 → O4
OUTPUT
IN5→ 5
IN6→ 6
12 → O5
11 → O6
IN7→ 7
10 → O7
9
FEATURES q Four package configurations (P, FP, GP and KP) q Medium breakdown voltage (BVCEO ≥ 35V) q Synchronizing current (IC(max) = 300mA) q Low output saturation voltage q Wide operating temperature range (Ta = –40 to +85 °C)
GND
8
16P4(P) 16P2N-A(FP) 16P2S-A(GP) Package type 16P2Z-A(KP)
CIRCUIT DIAGRAM
APPLICATION Driving of digit drives of indication elements (LEDs and lamps) with small signals
FUNCTION The M63804P, M63804FP, M63804GP and M63804KP each have seven circuits consisting of
NPN transistor. The
transistor emitters are all connected to the GND pin (pin 8) The
transistors allow synchronous flow of 300mA collector current. A maximum of 35V voltage can be applied between the collector and emitter.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol VCEO IC VI Parameter Collector-emitter voltage Collector current Input voltage M63804P Pd Power dissipation Ta = 25°C, when mounted on board Topr Tstg Operating temperature Storage temperature M638...
