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TD62164AP Dataheets PDF



Part Number TD62164AP
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description (TD62164AF/AP) 4CH HIGH-CURRENT DARLINGTON SINK DRIVER
Datasheet TD62164AP DatasheetTD62164AP Datasheet (PDF)

TD62164AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62164AP,TD62164AF 4CH HIGH−CURRENT DARLINGTON SINK DRIVER The TD62164AP and TD62164AF are high−voltage, high−current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and stepping moter drivers. Please observe the thermal condition for using. FEATURES Output current (single output) 700 mA (max) High .

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TD62164AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62164AP,TD62164AF 4CH HIGH−CURRENT DARLINGTON SINK DRIVER The TD62164AP and TD62164AF are high−voltage, high−current darlington drivers comprised of four NPN darlington pairs. All units feature integral clamp diodes for switching inductive loads. Applications include relay, hammer, lamp and stepping moter drivers. Please observe the thermal condition for using. FEATURES Output current (single output) 700 mA (max) High sustaining voltage output 50 V (min) Output clamp diodes Input compatible with TTL and 5−V CMOS GND and SUB terminal heat sink Package type−AP : DIP−16 pin Package type−AF : HSOP−16 pin PIN CONNECTION (TOP VIEW) TD62164AP Weight DIP16-P-300-2.54A: 1.11 g (typ.) HSOP16-P-300-1.00: 0.50 g (typ.) TD62164AF SCHEMATICS (EACH DRIVER) Note: The input and output parasitic diodes cannot be used as clamp diodes. 1 2006-06-14 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) TD62164AP/AF CHARACTERISTIC SYMBOL RATING Supply Voltage Output Sustaining Voltage Output Current Input Current Input Voltage Clamp Diode Reverse Voltage Clamp Diode Forward Current Operating Temperature AP AF Operating Temperature Storage Temperature VCC VCE (SUS) IOUT IIN VIN VR IF PD Topr Tstg −0.5~17 −0.5~50 700 50 17 50 700 1.47 / 2.7 (Note 1) 0.9 / 1.4 (Note 2) −40~85 −55~150 Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On Glass Epoxy PCB (60 × 60 × 1.6 mm Cu 30%) UNIT V V mA / ch mA V V mA W °C °C RECOMMENDED OPERATING CONDITIONS (Ta = −40~85°C) CHARACTERISTIC SYMBOL CONDITION MIN TYP. MAX UNIT Supply Voltage Output Sustaining Voltage Output Current AP AF Input Voltage Output On Output Off Input Current Clamp Diode Reverse Voltage Clamp Diode Forward Current Power Dissipation AP AF VCC VCE (SUS) DC 1 Circuit, Ta = 25°C 4.5 ― 5.5 V 0 ― 50 V 0 ― 570 IOUT Tpw = 25 ms 4 Circuit Ta = 85°C Duty = 10% Duty = 50% Duty = 10% 0 0 0 ― 570 570 mA / ch ― 570 Tj = 120°C Duty = 50% 0 ― 480 VIN 0 ― 15 V VIN (ON) IOUT = 500 mA VIN (OFF) IIN VR IF PD Ta = 85°C Ta = 85°C hFE = 150 10.0 ― 15 hFE = 2000 2.4 ― 15 V 0 ― 0.4 0 ― 20 mA ― ― 50 V ― ― 500 mA (Note 1) (Note 2) ― ― ― 1.4 W ― 0.7 Note 1: On Glass Epoxy PCB (50 × 50 × 1.6 mm Cu 50%) Note 2: On Glass Epoxy PCB (60 × 30 × 1.6 mm Cu 30%) 2 2006-06-14 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Leakage Current Collector−Emitter Saturation Voltage DC Current Transfer Ratio Input Voltage (Output On) Clamp Diode Reverse Current Clamp Diode Forward Voltage Output On Supply Current Output Off Input Capacitance Turn−On Delay Turn−Off Delay SYMBOL ICEX VCE (sat) hFE VIN (ON) IR VF ICC (ON) ICC (OFF) CIN tON tOFF TEST CIR− CUIT TEST CONDITION 1 VCE = 50 V, Ta = 25°C VCE = 50 V, Ta = 85°C 2 IOUT = 500 mA, VCC = 5 V IOUT = 200 mA, VCC = 5 V 2 VCE = 2 V, IOUT = 500 mA 3 IOUT = 500 mA, hFE = 150 IOUT = 500 mA, hFE = 2000 4 VR = 50 V, Ta = 25°C VR = 50 V, Ta = 85°C 5 IF = 500 mA 6 VCC = 5.5 V, VIN = 2.4 V VCC = 5.5 V, VIN = 0.4 V ― VIN = 0, f = 1 MHz 7 VOUT = 50 V, RL = 72 Ω VCC = 5.0 V, CL = 15 pF TEST CIRCUIT 1. ICEX 2. hFE, VCE (sat) 3. VIN (ON) TD62164AP/AF MIN TYP. MAX UNIT ― ― 50 µA ― ― 100 ― ― 0.8 V ― ― 0.45 2000 ― ― 7.0 ― 10.0 V 1.8 ― 2.4 ― ― 50 µA ― ― 100 ― ― 2.0 V ― 35 40 mA / ch ― ― 10 µA ― 15 ― pF ― 0.2 0.4 µs ― 4.0 8.0 4. IR 5. VF HFE = IOUT IIN 6. ICC (ON), ICC (OFF) 7. tON, tOFF Note 1: Pulse Width 50 µs, Duty Cycle 10% Output Impedance 50 Ω, tr ≤ 5ns, tf ≤ 10 ns Note 2: CL includes probe and jig capacitance. PRECAUTIONS for USING This IC does not include built-in protection circuits for excess current or overvoltage. If this IC is subjected to excess current or overvoltage, it may be destroyed. Hence, the utmost care must be taken when systems which incorporate this IC are designed. Utmost care is necessary in the design of the output line, VCC, COMMON and GND line since IC may be destroyed due to short−circuit between outputs, air contamination fault, or fault by improper grounding. 3 2006-06-14 TD62164AP/AF 4 2006-06-14 TD62164AP/AF 5 2006-06-14 PACKAGE DIMENSIONS DIP16−P−300−2.54A TD62164AP/AF Unit : mm Weight: 1.11 g (typ.) 6 2006-06-14 PACKAGE DIMENSIONS HSOP16−P−300−1.00 TD62164AP/AF Unit : mm Weight: 0.50 g (typ.) 7 2006-06-14 TD62164AP/AF Notes on Contents 1. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 2. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on Handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the devi.


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