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MRF173CQ Dataheets PDF



Part Number MRF173CQ
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description N-CHANNEL BROADBAND RF POWER MOSFET
Datasheet MRF173CQ DatasheetMRF173CQ Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173CQ/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 5.

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF173CQ/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz • Excellent Thermal Stability; Suited for Class A Operation MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Temperature Range Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 ±40 9.0 220 1.26 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C G S D MRF173CQ 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET CASE 316–01, STYLE 2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.8 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 — — — — — — 2.0 1.0 V mA µA ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) Forward Transconductance (VDS = 10 V, ID = 2.0 A) VGS(th) VDS(on) gfs 1.0 — 1.8 3.0 — 2.2 6.0 1.4 — V V mhos (continued) NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss — — — 110 105 10 — — — pF pF pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) Common Source Power Gain (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Load VSWR 30:1 at all phase angles Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) NF Gps η ψ — 11 55 1.5 13 60 — — — dB dB % No Degradation in Output Power Zin Zout — — 1.35–j5.15 2.72–j149 — — Ohms Ohms R2 R1 C8 + - C11 C10 RFC2 D.U.T. RFC1 C12 + - VDD = 28 V C13 C14 Vdc + - C9 Z1 RF INPUT C1 C2 C16 L1 C3 L2 R3 L3 C4 C5 L4 C15 C6 C7 RF OUTPUT C1, C15 — 470 pF Unelco C2, C3, C5 — 9–180 pF, Arco 463 C4, C6 — 15 pF, Unelco C7 — 5–80 pF, Arco 462 C8, C10, C14, C16 — 0.1 µF C9, C13 — 50 µF, 50 Vdc C11, C12 — 680 pF, Feed Through L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID L2 — #16 AWG Hairpin 1″ long L3 — #14 AWG Hairpin 0.8″ long L4 — #14 AWG Hairpin 1.1″ long RFC1 — Ferroxcube VK200–19/4B RFC2 — 18 Turns #18 AWG Enameled, 0.3 ″ ID R1 — 10 kΩ, 10 Turns Bourns R2 — 1.8 kΩ, 1/4 W R3 — 10 kΩ, 1/2 W Z1 — 1N5925A Motorola Zener Figure 1. 150 MHz Test Circuit REV 0 2 TYPICAL CHARACTERISTICS 120 f = 100 MHz Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 0 0 1 2 3 4 5 6 7 150 MHz 200 MHz 80 70 Pout , OUTPUT POWER (WATTS) 60 50 40 f = 100 MHz 150 MHz 200 MHz 30 20 VDD = 28 V IDQ = 50 mA 10 0 0 2.0 4.0 6.0 8.0 10 VDD = 13.5 V IDQ = 50 mA 12 14 Pin, INPUT POWER (WATTS) 8 9 10 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 1.0 W IDQ = 50 mA f = 100 MHz Pin = 4.0 W 3.0 W 2.0 W 140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 2.0 W IDQ = 50 mA f = 150 MHz Pin = 8.0 W 6.0 W 4.0 W VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 140 Pout , OUTPUT POWER (WATTS) Pin = 14 W 10 W G PS , POWER GAIN (dB) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 6.0 W 4.0 W IDQ = 50 mA f = 200 MHz 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 20 40 60 80 100 120 140 160 f, FREQUENCY (MHz) 180 200 220 Pout = 80 W VDD = 28 V IDQ = 50 mA VDD, SUPPLY VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency RE.


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