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PHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)
MOC119
DESCRIPTION
The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor.
PACKAGE DIMENSIONS
PIN 1 ID.
0.270 (6.86) 0.240 (6.10)
6
SEATING PLANE
FEATURES
• High current transfer ratio of 300% 1 • No base connection for improved noise immunity • Underwriters Laboratory (UL) recognized File# E90700
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
0.200 (5.08) 0.115 (2.92)
0.154 (3.90) 0.100 (2.54)
0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20)
APPLICATIONS
• • • • • Appliances, measuring instruments I/O interface for computers Programmable controllers Portable electronics Interfacing and coupling systems of different potentials and impedance • Solid state relays
ANODE 1
6 N/C
0.022 (0.56) 0.016 (0.41)
0° to 15°
0.300 (7.62) TYP
CATHODE 2
5 COLLECTOR
0.100 (2.54) TYP
N/C 3
4 EMITTER
NOTE All dimensions are in inches (millimeters)
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C Input-Output Isolation Voltage EMITTER DC/Average Forward Input Current Reverse Input Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Detector Power Dissipation @ TA = 25°C Derate above 25°C Continuous Collector Current
2001 Fairchild Semiconductor Corporation DS300382 2/16/01
(TA = 25°C Unless otherwise specified.) Symbol TSTG TOPR TSOL PD VISO IF VR PD VCEO VECO PD IC Value -55 to +150 -55 to +100 260 for 10 sec 250 2.94 5300 60 3 120 1.41 30 7 150 1.76 150 Units °C °C °C mW mW/°C Vac(rms) mA V mW mW/°C V V mW mW/°C mA
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PHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)
MOC119
ELECTRICAL CHARACTERISTICS
(TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameter EMITTER Input Forward Voltage Input Capacitance Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Test Conditions (IF = 10 mA) (VR = 0, f = 1 MHz) (VR = 3.0 V) (IC = 100 µA) (IE = 10 µA) (VCE = 10 V) Symbol VF CIN IR BVCEO BVECO ICEO 30 7 100 Min Typ** 1.15 18 0.05 100 Max 1.5 Unit V pF µA V V nA
TRANSFER CHARACTERISTICS
DC Characteristic Current Transfer Ratio, Test Conditions (IF = 10 mA, VCE = 2 V) Symbol CTR Min 30 (300) Typ** 45 (450) Max Units mA (%)
TRANSFER CHARACTERISTICS
Characteristic SWITCHING TIMES Turn-on Time Turn-off Time (VCE = 10 V, RL = 1001, IF = 5 mA) toff 95 µs Test Conditions Symbol ton Min Typ** 3.5 Max Units µs
ISOLATION CHARACTERISTICS
Characteristic Input-Output Isolation Voltage Isolation Resistance Isolation Capacitance Collector - Emitter Saturation Voltage Note ** Typical values at TA = 25°C Test Conditions (II-O 61 µA, 1 min.) (II-O 61 µA, 1 min.) (VI-O = 500 VDC) (V = 0 V, f = 1 MHz) (IC = 10 mA, IF = 10 mA) Sym.