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SD5300 Dataheets PDF



Part Number SD5300
Manufacturers Calogic
Logo Calogic
Description Quad DMOS Analog Switch Driver Improved Performance Over SD5000N and SD5400CY
Datasheet SD5300 DatasheetSD5300 Datasheet (PDF)

Quad DMOS Analog Switch Driver CORPORATION "Improved Performance Over SD5000N and SD5400CY" SD5300 FEATURES DESCRIPTION 1ns The Calogic SD5300 is a monolithic array of 20V enhancement-mode DMOS FET analog switch drivers. The SD5300 is manufactured with implanted high-speed, high-voltage and low resistance double-diffused MOS (DMOS) process, and was designed to drive DMOS and other analog switches. The devices are available in 16-pin plastic DIP package and in a die form for hybrid applications.

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Quad DMOS Analog Switch Driver CORPORATION "Improved Performance Over SD5000N and SD5400CY" SD5300 FEATURES DESCRIPTION 1ns The Calogic SD5300 is a monolithic array of 20V enhancement-mode DMOS FET analog switch drivers. The SD5300 is manufactured with implanted high-speed, high-voltage and low resistance double-diffused MOS (DMOS) process, and was designed to drive DMOS and other analog switches. The devices are available in 16-pin plastic DIP package and in a die form for hybrid applications. Custom devices based on SD5300 can also be ordered. ORDERING INFORMATION Part SD5300Y SD5300N XSD5300 Package SOIC Plastic DIP Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC -55oC to +125oC • Low Propagation Time . . . . . . . . . . . . . . . . . . . . . . . • Low On Resistance Insertion Loss • Low • Low Capacitance • • – Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . 3.6pF typ. – Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6pF typ. – Feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6pF typ. Low Crosstalk . . . . . . . . . . . . . . . . . . . . -107dB @ 4kHz Input Transient Protection APPLICATION • Analog Switch Driver • Wide Band Dual Differential Amplifiers FUNCTIONAL BLOCK DIAGRAM DUAL IN LINE PACKAGE PIN CONFIGURATION SO PIN CONFIGURATION G1 TOP VIEW S1 TOP VIEW 16 D4 15 N/C 14 G4 13 S4 12 S3 11 G 3 10 N/C 9 D3 D1 D1 1 S2 1 1 4 S1 13 NC 12 G 1 11 D 1 10 D 4 9 G4 8 SUBSTRATE 2 G2 Bo dy 2 G1 S1 S2 3 4 5 6 G2 3 D2 4 D3 5 G3 6 S3 7 D2 S2 G2 G3 N/C 7 S3 D3 D2 8 S4 G4 D4 S4 SUBSTRATE CD9 SD5300 CORPORATION ABSOLUTE MAXIMUM RATINGS PARAMETER Breakdown Voltage Drain-Source Source-Drain Drain-Substrate Source-Substrate Gate-Source Gate-Substrate Gate-Drain Continuous Drain Current SYMBOL VDS VSD VDB VSB VGS VGB VGD ID MAX. VALUE 20 20 25 25 25 25/-.3 25 50 UNITS ABSOLUTE MAXIMUM PARAMETER Drain Current Temperature Range Operating Storage Power Dissipation Package Each Device SYMBOL ID MAX. VALUE 50 UNITS mA o V TJ TS -55 to +85 -55 to +150 C mA PD PD 640 (Note 1) 300 (Note 2) mW Notes: 1. Linear Derating Factor – 10.7mW/oC above 25oC 2. Linear Derating Factor – 5.0mW/oC above 25 oC ELECTRICAL CHARACTERISTICS (TA = 25oC, unless otherwise noted) SYMBOL BVDS BVSB IGBS VGS(th) PARAMETER Drain-Source Breakdown Voltage Source-Substrate Breakdown Voltage Gate-Body Leakage Current Gate-Source Threshold Voltage 0.5 40 r DS(on) Drain-Source ON Resistance 22 17 15 g fs c (ga+gd+gb) c (gd+db) c (gs+sb) c (dg) CT Common-Source Forward Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance Cross Talk 10 12 2.4 1.3 3.5 0.3 -107 3.7 1.7 4.5 .7 dB pF f = 1MHz, VDS = 10V, VGS = VBS = -15V MIN 20 20 TYP 25 V 25 1.0 2.0 45 25 20 17 mmhos ohms µA V IS = 10µA, VGS = 0, Drain Open VGB = 25V, VDB = VSB = 0 VDS = VGS, I D = 1.0 µA, VSB = 0 VGS = 5V, I D = 1mA, VSB = 0 VGS = 10V, ID = 1mA, VSB =.


C0805C104xxxx SD5300 FDC15


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