HAT2142H

HAT2142H Silicon N Channel Power MOS FET Power Switching Features Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS (on) = 35 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1234 5 D S SS 1 23 Preliminary REJ03G1194-0800 Rev.8.00 Jul 29, 2009 1, 2, 3 4 5 Source Gate Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25 °C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 100 ±20 10 40 10 10 10 15 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C REJ03G1194-0800 Rev.8.00 Jul 29, 2009 Page 1 of 7 HAT2142H Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test Symbol V ...