STP40NF12

STP40NF12 N-CHANNEL 120V - 0.028Ω - 40A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STP40NF12 s s s s VDSS 120 V RDS(on) < 0.032 Ω ID 40 A TYPICAL RDS(on) = 0.028Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 120 120 ± 20 40 28 160 150 1 14 150 – 55 to 175 (1) ISD ≤40A, di/dt ≤ 600A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. (2) Starting Tj = 25°C, ID = 40A, VDD = 50V Unit V V V A A A W W/°C V/ns mJ °C (q ) Pulse width limited by safe operating area October 2003 1/8 STP40NF12 THER...