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ST93C06C Dataheets PDF



Part Number ST93C06C
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM
Datasheet ST93C06C DatasheetST93C06C Datasheet (PDF)

ST93C06 ST93C06C 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93.

  ST93C06C   ST93C06C


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ST93C06 ST93C06C 256 bit (16 x 16 or 32 x 8) SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE READY/BUSY SIGNAL DURING PROGRAMMING SINGLE 5V ±10% SUPPLY VOLTAGE SEQUENTIAL READ OPERATION 5ms TYPICAL PROGRAMMING TIME ENHANCED ESD/LATCH UP PERFORMANCES for ”C” VERSION ST93C06 and ST93C06C are replaced by the M93C06 DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electrically Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance Single Polysilicon CMOS technology. In the text the two products are referred to as ST93C06. The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words. The organization may be selected by a signal applied on the ORG input. The memory is accessed through a serial input (D) and by a set of instructions which includes Read a byte/word, Write a byte/word, Erase a byte/word, Erase All and Write All. ARead instruction loads the address of the first byte/word to be read into an internal address pointer. Table 1. Signal Names S D Q C ORG VCC VSS June 1997 Chip Select Input Serial Data Input Serial Data Output Serial Clock Organisation Select Supply Voltage Ground 8 1 PSDIP8 (B) 0.4mm Frame 8 1 SO8 (M) 150mil Width Figure 1. Logic Diagram VCC D C S ORG ST93C06 ST93C06C Q VSS AI00816B 1/15 This is information on a product still in production bu t not recommended for new de signs. ST93C06, ST93C06C Figure 2A. DIP Pin Connections Figure 2B. SO Pin Connections ST93C06 ST93C06C S C D Q 1 2 3 4 8 7 6 5 AI00817B ST93C06 ST93C06C VCC DU ORG VSS S C D Q 1 2 3 4 8 7 6 5 AI00818C VCC DU ORG VSS Warning: DU = Don’t Use Warning: DU = Don’t Use Table 2. Absolute Maximum Ratings (1) Symbol TA TSTG TLEAD VIO VCC Parameter Ambient Operating Temperature Storage Temperature Lead Temperature, Soldering (SO8 package) (PSDIP8 package) 40 sec 10 sec Value –40 to 125 –65 to 150 215 260 –0.3 to VCC +0.5 –0.3 to 6.5 (2) Unit °C °C °C V V V V Input or Output Voltages (Q = VOH or Hi-Z) Supply Voltage Electrostatic Discharge Voltage (Human Body model) ST93C06 ST93C06C ST93C06 ST93C06C VESD Electrostatic Discharge Voltage (Machine model) (3) 2000 4000 500 500 Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other relevant quality documents. 2. MIL-STD-883C, 3015.7 (100pF, 1500 Ω). 3. EIAJ IC-121 (Condition C) (200pF, 0 Ω). DESCRIPTION (cont’d) The data contained at this address is then clocked out serially. The address pointer is automatically incremented after the data is output and, if the Chip Select input (S) is held High, the ST93C06 can output a sequential stream of data bytes/words. In this way, the memory can be read as a data stream from 8 to 256 bits long, or continuously as the address counter automatically rolls over to ’00’ when the highest address is reached. Programming is internally self-timed (the external clock 2/15 signal on C input may be disconnected or left running after the start of a Write cycle) and does not require an erase cycle prior to the Write instruction. The Write instruction writes 8 or 16 bits at one time into one of the 32 bytes or 16 words. After the start of the programming cycle aBusy/Ready signal is available on the Data output (Q) when Chip Select (S) is driven High. The design of the ST93C06 and the High Endurance CMOS technologyused for its fabrication give an Erase/Write cycle Endurance of 1,000,000 cycles and a data retention of 40 years. ST93C06, ST93C06C AC MEASUREMENT CONDITIONS Input Rise and Fall Times Input Pulse Voltages Input Timing Reference Voltages Output Timing Reference Voltages ≤ 20ns 0.4V to 2.4V 1V to 2.0V 0.8V to 2.0V Figure 3. AC Testing Input Output Waveforms 2.4V 2V 1V 2.0V 0.8V OUTPUT AI00815 0.4V Note that Output Hi-Z is defined as the point where data is no longer driven. INPUT Table 3. Capacitance (1) (TA = 25 °C, f = 1 MHz ) Symbol C IN COUT Parameter Input Capacitance Output Capacitance Test Condition VIN = 0V VOUT = 0V Min Max 5 5 Unit pF pF Note: 1. Sampled only, not 100% tested. Table 4. DC Characteristics (TA = 0 to 70°C or –40 to 85°C; VCC = 5V ± 10%) Symbol ILI ILO ICC Parameter Input Leakage Current Output Leakage Current Supply Current (TTL Inputs) Supply Current (CMOS Inputs) ICC1 VIL VIH VOL Supply Current (Standby) Input Low Voltage (D, C, S) Input High Voltage (D, C, S) Output Low Voltage IOL = 2.1mA IOL = 10 µA IOH = –400µA IOH = –10µA 2..


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