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STD3NK60ZFP Dataheets PDF



Part Number STD3NK60ZFP
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL Power MOSFET
Datasheet STD3NK60ZFP DatasheetSTD3NK60ZFP Datasheet (PDF)

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.6 < 3.6 < 3.6 < 3.6 < 3.6 Ω Ω Ω Ω Ω ID 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPA.

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STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3Ω - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE STP3NK60Z STP3NK60ZFP STB3NK60Z STD3NK60Z STD3NK60Z-1 s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 3.6 < 3.6 < 3.6 < 3.6 < 3.6 Ω Ω Ω Ω Ω ID 2.4 A 2.4 A 2.4 A 2.4 A 2.4 A Pw 45 W 20 W 45 W 45 W 45 W 1 3 2 TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 1 3 TO-220FP D2PAK 3 1 1 3 2 DPAK IPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING s ORDERING INFORMATION SALES TYPE STP3NK60Z STP3NK60ZFP STB3NK60ZT4 STD3NK60Z-1 STD3NK60ZT4 July 2003 MARKING P3NK60Z P3NK60ZFP B3NK60Z D3NK60Z D3NK60Z PACKAGE TO-220 TO-220FP D2PAK IPAK DPAK PACKAGING TUBE TUBE TAPE & REEL TUBE TAPE & REEL 1/15 STP3NK60Z /FP - STB3NK60Z - STD3NK60Z - STD3NK60Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP3NK60Z STB3NK60Z Value STP3NK60ZFP STD3NK60Z STD3NK60Z-1 Unit VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 2.4 1.51 9.6 45 0.36 600 600 ± 30 2.4 (*) 1.51 (*) 9.6 (*) 20 0.16 2100 4.5 2500 -55 to 150 2.4 (*) 1.51 (*) 9.6 (*) 45 0.36 V V V A A A W W/°C V V/ns V °C ( ) Pulse width limited by safe operating area (1) ISD ≤2.4 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.78 62.5 300 TO-220FP 6.25 DPAK IPAK 2.78 100 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 2.4 150 Unit A mJ GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1mA (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-b.


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