A1941

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm High breakdown voltage: VCEO = −140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −140 V Collector-emitter voltage VCEO −140 V Emitter-base voltage VEBO −5 V Collector current IC −10 A Base current IB −1 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 100 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-06 1 2013-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector...