BUP311D

Infineon IGBT With Antiparallel Diode BUP 311D Preliminary data sheet Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode Former Development ID: BUP 3JKD Pin 1 G Type BUP 311D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V Pin 2 C Ordering Code ON REQUEST C67078-A4102 Pin 3 E VCE IC Package TO-218 AB 1200V A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 20 12 TC = 25 °C TC = 100 °C Pulsed collector current, tp = 1 ms ICpuls 40 TC = 25 °C Diode forward current IF tbd TC = 100 °C Pulsed diode current, tp = 1 ms IFpuls tbd TC = 25 °C Power dissipation Ptot 125 W -55 ... + 150 -55 ... + 150 °C TC = 25 °C Chip or operating temperature Storage temperature Tj Tstg Semiconductor Group 1 May-06-1999 Infineon Maximum Ratings Parameter Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, junction - case Diode thermal resistance, chip case Symbol Values BUP 311D Unit °C - Tj Tstg - -55 ... + 150 -55 ... + 150 55 / 150 / 56 RthJC RthJCD ≤1 ≤ 2.5 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.5 3.1 3.4 4.3 6.5 3 3.7 - V VGE = VCE, IC = 0.3 mA, Tj = 25 °C Collector-emitter saturation voltage VCE(sa...