STY100NS20FD

N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET TYPE STY100NS20FD n n n n n n n STY100NS20FD VDSS 200V RDS(on) < 0.024Ω ID 100 A TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW INTRINSIC CAPACITANCE FAST BODY-DRAIN DIODE:LOW trr, Qrr 2 1 3 Max247 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS n HIGH CURRENT, HIGH SPEED SWITCHING n SWITCH MODE POWER SUPPLY (SMPS) n DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 200 200 ±20 100 63 400 450 3.6 25 –65 to 150 150 (1)ISD ≤100A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Uni...