STY140NS10

N-CHANNEL 100V - 0.009 Ω - 140A MAX247™ MESH OVERLAY™ POWER MOSFET TYPE STY140NS10 s s s STY140NS10 VDSS 100V RDS(on) <0.011Ω ID 140A TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 2 1 3 Max247™ INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SWITCH MODE POWER SUPPLY (SMPS) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot EAS(1) dv/dt (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Peak Diode Recovery voltage slope Storage Temperature Operating Junction Temperature Value 100 100 ± 20 140 99 560 450 3 2900 5 -55 to 175 -55 to 175 Unit V V V A A A W W/°C mJ V/ns °C °C () Pulse width limited by safe operating area. August 2001 . (1) Starting T j = 25 oC, ID = 70A, VDD= 50V (2) ISD ≤140A, di/dt ≤200A/µs, VDD ≤ V (BR)DSS, T j ≤ TJMAX. 1/8 STY140NS10 THERMAL DATA Rthj-...