SD2931

® SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA s s s s GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931 is intended for use in 50V dc large signal applications up to 230 MHz M174 epoxy sealed ORDER CODE BRANDING SD2931 TSD2931 PIN CONNECTION 1. Drain 2. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V DGR V GS ID P DISS Tj T STG Parameter Drain-Gate Voltage (R GS = 1M Ω ) Gate-Source Voltage Drain Current Power Dissipation Max. Operating Junction Temperature Storage Temperature Value 125 125 ± 20 16 292 200 -65 to 150 3.Gate 4. Source Unit V V V A W o o V (BR)DSS Drain Source Voltage C C THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance ∗ 0.6 0.2 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/4 SD2931 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symbol V (BR)DSS I DSS I GSS V GS(Q) V DS(ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter I DS = 100 mA V DS = 50 V V DS = 0 V I D = 250 mA I D = 10 A ID = 5 A V DS = 50 V V DS = 50 V V DS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 180 15 2 2.7 Min. 125 5 5 5 3 Typ. Max. Unit V mA µA V V mh...