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STP4NB100 Dataheets PDF



Part Number STP4NB100
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STP4NB100 DatasheetSTP4NB100 Datasheet (PDF)

® STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P4NB100 ST P4NB100FP s s s s s V DSS 1000 V 1000 V R DS(on) < 4.4 Ω < 4.4 Ω ID 3.8 A 3.8 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performanc.

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® STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P4NB100 ST P4NB100FP s s s s s V DSS 1000 V 1000 V R DS(on) < 4.4 Ω < 4.4 Ω ID 3.8 A 3.8 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction T emperature TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP4NB100 ST P4NB100F P 1000 1000 ± 30 3.8 2.4 15.2 125 1 4  -65 to 150 150 ( 1) ISD ≤ 3.8A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V 3.8(*) 2.4(*) 15.2 40 0.32 4 2000 A A A W W/ C V/ns V o o o C C (•) Pulse width limited by safe operating area (*) Limited only by maximum temperature allowed October 1999 1/9 STP4NB100/STP4NB100FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1 62.5 0.5 300 TO-220FP 3.12 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 3.8 360 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 1000 1 50 ± 100 Typ. Max. Unit V µA µA nA V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 30 V T c = 125 C o ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V Test Con ditions ID = 250 µ A ID = 2 A 3.8 Min. 3 Typ. 4 4 Max. 5 4.4 Unit V Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗.


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