PM25RLA120 Datasheet PDF - Mitsubishi Electric Semiconductor

MITSUBISHI PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a) Adopting new ...

MITSUBISHI PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a) Adopting new 5th generation IGBT (CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each conservation upper and lower arm of IPM. c) Current rating of brake part increased. 60% for the current rating of inverter part. 3φ 25A, 1200V Current-sense IGBT type inverter 15A, 1200V Current-sense regenerative brake IGBT Monolithic gate drive & protection logic Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available from upper arm devices) Acoustic noise-less 3.7kW class inverter application APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 120 7 19.75 3.25 16 3-2 16 3-2 106 16 3-2 15.25 6-2 2-φ5.5 MOUNTING HOLES Terminal code 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. VUPC UFO UP VUP1 VVPC VFO VP VVP1 VWPC WFO 11. 12. 13. 14. 15. 16. 17. 18. 19. WP VWP1 VNC VN1 Br UN VN WN Fo 55 B U V W N 35 6-φ6 10.75 32.75 23 23 23 19- 0.5 32 6 6 13 31 P Oct. 2003 MITSUBISHI PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM Br Fo VNC WN VN1 VN UN WP VWP1 VWPC WFO VP VVPC VVP1 VFO UP VUPC VUP1 UFO Gnd In Fo Vcc Gnd In ...