Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243
FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃)
TRANSISTOR (NPN)
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
Collector current 1 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat)
123
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=10µA, IE=0 Ic=2mA, IB=0 IE=10µA, IC=0 VCB=50V, IE=0 VEB=4V, IC=0 VCE=4V, IC=100mA IC=500mA, IB=25mA VCE=2V, IC=10mA VCB=10V, IE=0, f=1MHz
60 60 6 0.2 0.2 55 300 0.3
80 25
µA µA
V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range Marking
w
w
w
.d
a t a
e h s
et
. u 4
m o c
C
D 90-180
E 150-300
55-110
www.DataSheet4U.com
.