FID50-12BD

Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge in ISOPLUS i4-PACTM FIO 50-12BD IC25 VCES VCE(sat) typ. = 50 A = 1200 V = 2.0 V 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25°C TC = 90°C VGE = ±15 V; RG = 39 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH VCE = 900V; VGE = ±15 V; RG = 39 Ω; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 32 50 VCES 10 200 V V A A A µs W Features IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits HiPerFREDTM diodes - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low inductive current path - high reliability - industry standard outline Applications switches to control bidirectional current flow by a single control signal: matrix converters spare matrix converters AC controllers Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.4 200 150 60 700 50 3.6 3.0 2 250 1.2 2.6 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJS IC = 30 A; VGE = 15 V; TVJ = 25°C...