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MRF137 Dataheets PDF



Part Number MRF137
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description N-CHANNEL MOS BROADBAND RF POWER FET
Datasheet MRF137 DatasheetMRF137 Datasheet (PDF)

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain • 100% Tested For Load Mismatch At All .

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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 1.5 dB (Typ) at 1.0 A, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques D MRF137 30 W, to 400 MHz N–CHANNEL MOS BROADBAND RF POWER FET G CASE 211–07, STYLE 2 S Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ±40 5.0 100 0.571 –65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 1.75 Unit °C/W Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 1 MRF137 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate–Source Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 — — — — — — 4.0 1.0 Vdc mAdc µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) Forward Transconductance (VDS = 10 V, ID = 500 mA) VGS(th) gfs 1.0 500 3.0 750 6.0 — Vdc mmhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss Coss Crss — — — 48 54 11 — — — pF pF pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDS = 28 Vdc, ID = 1.0 A, f = 150 MHz) Common Source Power Gain (VDD = 28 Vdc, Pout = 30 W, IDQ = 25 mA) f = 150 MHz (Figure 1) f = 400 MHz (Figure 14) η ψ No Degradation in Output Power NF Gps 13 — 50 16 7.7 60 — — — % — 1.5 — dB dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA) Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at All Phase Angles) R4 BIAS ADJUST + - RFC2 C9 C10 + VDD = 28 V R3 D1 C7 C8 RFC1 R2 C6 RF INPUT C1 L1 R1 C5 L2 DUT L3 RF OUTPUT C2 C3 C4 C1 — Arco 403, 3.0–35 pF, or equivalent C2 — Arco 406, 15–115 pF, or equivalent C3 — 56 pF Mini–Unelco, or equivalent C4 — Arco 404, 8.0–60 pF, or equivalent C5 — 680 pF, 100 Mils Chip C6 —.


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