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PD- 91809B
SMPS MOSFET
IRFB11N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply (...
www.DataSheet4U.com
PD- 91809B
SMPS MOSFET
IRFB11N50A
HEXFET® Power MOSFET
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current
VDSS
500V
Rds(on) max
0.52Ω
ID
11A
TO-220AB
G D S
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
11 7.0 44 170 1.3 ± 30 6.9 -55 to + 150 300 (1.6mm from case ) 10 lbfin (1.1Nm)
Units
A W W/°C V V/ns °C
Applicable Off Line SMPS Topologies:
l l l
Two
Transistor Forward Half & Full Bridge Power Factor Correction Boost
through
are on page 8
Notes
www.irf.com
1
3/30/99
IRFB11N5OA
Static @ TJ = 25°C (unless otherwise specified)
V(BR)DSS RDS(on) VGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 500 ––– 2.0 ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– ––– Max. Units...