STP55NF03L

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE STP55NF03L STB55NF03L STB55NF03L-1 s s VDSS 30 V 30 V 30 V RDS(on) <0.013 Ω <0.013 Ω <0.013 Ω ID 55 A 55 A 55 A 3 1 3 12 s s TYPICAL RDS(on) = 0.01 Ω OPTIMIZED FOR HIGH SWITCHING OPERATIONS LOW GATE CHARGE LOGIC LEVEL GATE DRIVE D 2PAK TO-263 I2PAK TO-262 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s LOW VOLTAGE DC-DC CONVERTERS s HIGH CURRENT, HIGH SWITCHING SPEED s HIGH EFFICIENCY SWITCHING CIRCUITS 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR VGS ID ID IDM() Ptot Tstg Tj March 2002 . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 55 39 220 80 0.53 -60 to 175 175 Unit V V V A A A W W/°C °C °C 1/11 () Pulse width limit ed by safe operating area. www.DataSheet4U.com STP55NF03L STB55NF03L/-1 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resista...