BS616LV4017

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit BS616LV4017 Wide Vcc operation voltage : 2.4~5.5V Very low power consumption : Vcc = 3.0V C-grade: 26mA (@55ns) operating current I-grade: 27mA (@55ns) operating current C-grade: 21mA (@70ns) operating current I-grade: 22mA (@70ns) operating current 0.45uA (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63mA (@55ns) operating current I-grade: 65mA (@55ns) operating current C-grade: 53mA (@70ns) operating current I-grade: 55mA (@70ns) operating current 2.0uA (Typ.) CMOS standby current High speed access time : -55 55ns -70 70ns Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin „ DESCRIPTION The BS616LV4017 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.45uA at 3.0V/25oC and maximum access time of 55ns at 3.0V/85oC. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The BS616LV4017 has an automatic power down feature, reducing the power consumption significantly when chip...