MBM30LV0032

FUJITSU SEMICONDUCTOR DATA SHEET DS05-20884-2E FLASH MEMORY CMOS 32M (4M × 8) BIT NAND-type MBM30LV0032 s DESCRIPTION The MBM30LV0032 device is a single 3.3 V 4M × 8 bit NAND flash memory organized as 528 byte × 16 pages × 512 blocks. Each 528 byte page contains 16 bytes of optionally selected spare area which may be used to store ECC code(Specifications indicated are on condition that ECC system would be combined.). Program and read data is transferred between the memory array and page register in 528 byte increments. A 528 byte page can be programmed in 200 µs and an 8K byte block can be erased in 2 ms under typical conditions. An internal controller automates all program and erase operations including the verification of data margins. Data within a page can be read with a 50 ns cycle time per byte. The I/O pins are utilized for both address and data input/output as well as command inputs. The MBM30LV0032 is an ideal solution for applications requiring mass non-volatile storage such as solid state file storage, digital recording, image file memory for still cameras, and other uses which require high density and non-volatile storage. s PRODUCT LINE UP Part No. Operating Temperature VCC Read Power Dissipation (Max.) Erase / Program TTL Standby CMOS Standby MBM30LV0032 –40°C to +85°C +2.7 V to +3.6 V 72 mW 72 mW 3.6 mW 0.18 mW s PACKAGES 44-pin plastic TSOP (II) Marking Side Marking Side (FPT-44P-M07) (Normal Bend) (FPT-44P-M08) (Reverse Bend) MBM30LV0032 s FEATURES ...