STE36N50-DA

STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 Ω ID 36 A 4 3 s s s s s LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INDUSTRIAL APPLICATIONS: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DK) INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS) o o Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500 Unit V V V A A A W W/o C o o C C V () Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE ABSOLUTE MAXIMUM RATINGS Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repetitive Peak Reverse Voltage Non Repetitive Peak Reverse Voltage RMS Forward Curr...