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STB13005-1 Dataheets PDF



Part Number STB13005-1
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS
Datasheet STB13005-1 DatasheetSTB13005-1 Datasheet (PDF)

STB13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellu.

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STB13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. 123 I2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging STB13005-1 B13005A B13005B I2PAK Tube 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. October 2007 Rev 1 1/11 www.st.com 11 Contents Contents STB13005 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STB13005 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter VCES VCEO VEBO IC ICM IB IBM Ptot Tstg TJ Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Electrical ratings Value 700 400 9 4 8 2 4 75 -65 to 150 150 Unit V V V A A A A W °C °C 3/11 Electrical characteristics 2 Electrical characteristics STB13005 (Tcase = 25°C unless otherwise specified) Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE =700 V VCE =700 V TC = 125°C 1 mA 5 mA IEBO Emitter cut-off current (IC = 0) VEB = 9 V 1 mA Collector-emitter VCEO(sus) (1) sustaining voltage (IB = 0) IC =10 mA 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 1 A _ IC = 2 A _ _ IC = 4 A _ _ IB = 0.2 A IB = 0.5 A IB = 1 A 0.5 V 0.6 V 1V VBE(sat) (1) Base-emitter saturation voltage IC = 1 A _ IC = 2 A _ _ IB = 0.2 A IB = 0.5 A 1.2 V 1.6 V hFE (1)(2) DC current gain IC = 1 A Group A Group B IC = 2 A _ __ VCE = 5 V VCE = 5 V 15 27 8 32 45 40 Resistive load ts Storage time tf Fall time IC = 2 A VCC = 125 V IB1 = - IB2 = 0.4 A tp = 30 µs 1.5 0.2 3 µs µs 1. Pulsed duration = 300 ms, duty cycle £1.5% 2. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 4/11 STB13005 Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Derating curve Figure 4. DC current gain Figure 5. DC current gain Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation voltage voltage 5/11 Electrical characteristics Figure 8. Inductive load fall time STB13005 Figure 9. Inductive load storage time Figure 10. Resistive load fall time Figure 11. Resistive load storage time Figure 12. Reverse biased operating area 6/11 STB13005 3 Test circuit Figure 13. Inductive load switching test circuit Test circuit 1) Fast electronic switch 2) Non-inductive resistor 3) Fast recovery rectifier Figure 14. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 7/11 Package mechanical data 4 Package mechanical data STB13005 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STB13005 Package mechanical data DIM. A A1 b b1 c c2 D e e1 E L L1 L2 MIN. 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TO-262 (I2PAK) MECHANICAL DATA mm. TYP MAX. 4.60 2.72 0.88 1.70 0.70.


STB13005 STB13005-1 MN674A


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