N-CHANNEL Power MOSFET
STP20NK50Z - STW20NK50Z
N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH™Power MOSFET
TARGET DATA TY...
Description
STP20NK50Z - STW20NK50Z
N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH™Power MOSFET
TARGET DATA TYPE STP20NK50Z STW20NK50Z
s s s s s s
VDSS 500 V 500 V
RDS(on) < 0.27 Ω < 0.27 Ω
ID 20 A 20 A
Pw 190 W 190 W
TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY
3 2 1
TO-220
TO-247
DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
s
ORDERING INFORMATION
SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE
July 2003
1/7
STP20NK50Z - STW20NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter
STP20NK50Z
Value
STW20NK50Z
Unit V V V 20 10 64 190 1.51 A A A W W/°C V V/ns °C °C
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Di...
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