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SPP24N60C3 Dataheets PDF



Part Number SPP24N60C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet SPP24N60C3 DatasheetSPP24N60C3 Datasheet (PDF)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A PG-TO220-3-1 Type SPP24N60C3 Package Ordering Code PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C .

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP24N60C3 VDS @ Tjmax 650 V RDS(on) 0.16 Ω ID 24.3 A PG-TO220-3-1 Type SPP24N60C3 Package Ordering Code PG-TO220-3-1 Q67040-S4639 Marking 24N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 10 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 24.3 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage static VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Reverse diode dv/dt 4) Tj , Tstg dv/dt Value 24.3 15.4 72.9 780 1 24.3 ±20 ±30 240 -55... +150 15 Unit A mJ A V W °C V/ns Rev. 2.5 Page 1 2009-12-01 SPP24N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 , ID = 24.3 , Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Symbol RthJC RthJA Tsold Values Unit min. typ. max. - - 0.52 K/W - - 62 - - 260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - Drain-Source avalanche V(BR)DS VGS=0V, ID=24.3A - 700 breakdown voltage -V - Gate threshold voltage VGS(th) ID=1200µΑ, VGS=VDS 2.1 3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, µA Tj=25°C, - 0.1 1 Tj=150°C - - 100 Gate-source leakage current IGSS VGS=20, VDS=0V - Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A, Tj=25°C - Tj=150°C - Gate input resistance RG f=1MHz, open Drain - - 100 nA Ω 0.14 0.16 0.34 0.66 - Rev. 2.5 Page 2 2009-12-01 SPP24N60C3 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, - 21.5 - S ID=15.4A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance,2) Co(er) energy related Effective output capacitance,3) Co(tr) time related VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V to 480V - 3000 - pF - 1000 - - 60 - - 141 - pF - 224 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) VDD=380V, VGS=0/10V, - 13 - ns tr ID=24.3A, RG=3.3Ω - 21 - td(off) - 140 - tf - 14 - Gate Charge Characteristics Gate to source charge Gate to drain charge Qgs Qgd VDD=480, ID=24.3A Gate charge total Qg VDD=480V, ID=24.3A, VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=24.3A - 12.7 - nC - 45.8 - 104.9 135 - 5 -V 1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak


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