Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
SPP24N60C3
VDS @ Tjmax 650 V
RDS(on)
0.16 Ω
ID
24.3 A
PG-TO220-3-1
Type SPP24N60C3
Package
Ordering Code
PG-TO220-3-1 Q67040-S4639
Marking 24N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
ID puls
Avalanche energy, single pulse
EAS
ID = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
ID = 24.3 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax IAR
Gate source voltage static
VGS
Gate source voltage AC (f >1Hz)
VGS
Power dissipation, TC = 25°C
Ptot
Operating and storage temperature Reverse diode dv/dt 4)
Tj , Tstg dv/dt
Value
24.3 15.4 72.9 780
1
24.3 ±20 ±30 240 -55... +150
15
Unit A
mJ
A V W °C V/ns
Rev. 2.5
Page 1
2009-12-01
SPP24N60C3
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 , ID = 24.3 , Tj = 125 °C
Symbol dv/dt
Value 50
Unit V/ns
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s
Symbol
RthJC RthJA Tsold
Values
Unit
min. typ. max.
-
- 0.52 K/W
-
-
62
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=24.3A
-
700
breakdown voltage
-V -
Gate threshold voltage
VGS(th) ID=1200µΑ, VGS=VDS 2.1
3
3.9
Zero gate voltage drain current IDSS
VDS=600V, VGS=0V,
µA
Tj=25°C,
-
0.1
1
Tj=150°C
-
- 100
Gate-source leakage current
IGSS
VGS=20, VDS=0V
-
Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A,
Tj=25°C
-
Tj=150°C
-
Gate input resistance
RG
f=1MHz, open Drain
-
- 100 nA Ω
0.14 0.16 0.34 0.66 -
Rev. 2.5
Page 2
2009-12-01
SPP24N60C3
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min. typ. max.
Transconductance
gfs
VDS≥2*ID*RDS(on)max,
- 21.5 - S
ID=15.4A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss Effective output capacitance,2) Co(er) energy related
Effective output capacitance,3) Co(tr) time related
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V to 480V
- 3000 - pF
- 1000 -
-
60
-
-
141
- pF
-
224
-
Turn-on delay time Rise time Turn-off delay time Fall time
td(on)
VDD=380V, VGS=0/10V,
-
13
- ns
tr
ID=24.3A, RG=3.3Ω
-
21
-
td(off)
- 140 -
tf
-
14
-
Gate Charge Characteristics
Gate to source charge Gate to drain charge
Qgs Qgd
VDD=480, ID=24.3A
Gate charge total
Qg
VDD=480V, ID=24.3A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=24.3A
- 12.7 - nC - 45.8 - 104.9 135
-
5
-V
1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 4ISD<=ID, di/dt<=200A/us, VDClink=400V, Vpeak