MBM200JS12EW

IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING 4-Fast-on Terminal #110 Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 4- φ 6.5 20 108 93 20 20 3-M6 C2E1 G2 E2 E1 E2 C1 G1 28 28 7 12 PDE-M200JS12EW-0 47 φ 0.8 30 6.5 C2E1 G2 E2 E2 C1 E1 G1 ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Weight: 470 (g) TERMINALS Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit V V A A W °C °C VRMS N.m (kgf.cm) MBM200JS12EW 1,200 ±20 200 400 200 (1) 400 1,470 -40 ~ +150 -40 ~ +125 2,500(AC 1 minute) 2.94(30) (2) 2.94(30) (3) DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 60Arms max. (2)(3)Recommended Value 2.45N.m(25kgf.cm) CHARACTERISTICS Item (Tc=25°C ) Symbol Unit Min. Typ. Max. Test Conditions Collector Emitter Cut-Off Current I CES mA 1.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.7 3.4 IC=200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =200mA Input Capacitance Cies pF 21,000 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.2 0.35 VCC=600V ms Turn On Time ton 0.35 0.55 RL=3.0W Switching Times Fall Time tf 0.25 0....