MTH15N40

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-218 TYPE: MTH15N40 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 400 400 15 75 ±20 150 -65 to +150 275 Vdc Vdc Adc Adc Vdc Watts Adc °C °C ELECTRICAL CHARACTERISTICS TA @ 25° C Parameters Symbol Test Conditions Drain Source BVDSS ID = 0.25mA VGS = 0 Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA VDS = VGS ID = 1.0mA VDS = VGS TJ = 100°C Gate – Body Leakage IGSS VGS = 20V VDS = 0 Current Zero Gate Voltage IDSS VDS = 400V VGS = 0 Drain Current VDS = 320V VGS = 0 TJ = 125ºC On State Drain Current ID(on) Drain Source OnResistance Forward Transconductance Drain-Source On Voltage Drain-Source-On Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance rDS(on) gFS VDS(on) VDS(on) Ciss Coss Crss VDS = 25V VGS = 0 f = 1.0MHZ ID =8.0A VGS = 10V ID = 8.0A VDS = 10V ID = 15.0A VGS = 10V ID = 8.0A VGS = 10V TJ = 100ºC Min 400 2.0 1.5 Typ Max Unit Vdc Vdc nA mA mA Adc Ohms mhos 4.5 4.0 100 0.2 1.0 0.3 5.0 4.5 3.5 Vdc Vdc 3000 500 200 pF pF pF Page 1 of 2 TYPE: MTH15N40 Drain Source Diode Characterist...