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MTP50N06V Dataheets PDF



Part Number MTP50N06V
Manufacturers Motorola
Logo Motorola
Description TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM
Datasheet MTP50N06V DatasheetMTP50N06V Datasheet (PDF)

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed swi.

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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP50N06V/D TMOS Power Field Effect Transistor TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. ™ Data Sheet V™ MTP50N06V Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM TM D New Features of TMOS V • On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E–FET Predecessors Features Common to TMOS V and TMOS E–FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E–FET G S CASE 221A–06, Style 5 TO–220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms) Drain Current — Continuous @ 25°C Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, IL = 42 Apk, L = 0.454 µH, RG = 25 Ω) Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS RθJC RθJA TL Value 60 60 ± 20 ± 25 42 30 147 125 0.83 – 55 to 175 400 1.2 62.5 260 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ °C/W °C Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Preferred devices are Motorola recommended choices for future use and best overall value. REV 3 TMOS © Motorola Motorola, Inc. 1996 Power MOSFET Transistor Device Data 1 MTP50N06V ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Temperature Coefficient (Negative) Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 21 Adc) Drain–Source On–Voltage (VGS = 10 Vdc) (ID = 42 Adc) (ID = 21 Adc, TJ = 150°C) Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Gate Charge (See Figure 8) (VDS = 48 Vdc, ID = 42 Adc, VGS = 10 Vdc) (VDD = 25 Vdc, ID = 42 Adc, VGS = 10 Vdc, RG = 9.1 Ω) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 42 Adc, VGS = 0 Vdc) (IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C) VSD — — trr (IS = 42 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from contact screw on tab to center of die) (Measured from the drain lead 0.25″ from package to center of die) Internal Source Inductance (Measured from the source lead 0.25″ from package to source bond pad) (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. LD — LS — 3.5 4.5 7.5 — — nH nH ta tb QRR — — — — 1.06 0.99 84 73 11 0.28 2.5 — — — — — µC ns Vdc — — — — — — — — 12 122 64 54 47 9 21 16 20 250 110 90 70 — — — nC ns (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss — — — 1644 465 112 2320 660 230 pF VGS(th) 2.0 — RDS(on) VDS(on) — — gFS 16 1.4 — 23 1.7 1.6 — mhos — 2.7 3.0 0.025 4.0 — 0.028 Vdc mV/°C Ohm Vdc V(BR)DSS 60 — IDSS — — IGSS — — — — 10 100 100 nAdc — 69 — — Vdc mV/°C µAdc Symbol Min Typ Max Unit Reverse Recovery Time (See Figure 14) 2 Motorola TMOS Power MOSFET Transistor Device Data MTP50N06V TYPICAL ELECTRICAL CHARACTERISTICS 100.


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