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MTP55N06Z

Part Number	MTP55N06Z
Manufacturer	Motorola
Description	TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm
Published	Nov 2, 2005
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.™ Power Fiel...
Datasheet	MTP55N06Z PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP55N06Z/D Advance Information TMOS E-FET.
™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode with fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage tran...

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MTP55N06Z TMOS POWER FET 55 AMPERES 60 VOLTS RDS(on) = 18 mohm - Motorola

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