BLA1011-2

DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance. APPLICATIONS Avionics applications in the 1030 to 1090 MHz frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. 2 Top view BLA1011-2 PINNING - SOT538A PIN 1 2 3 drain gate source, connected to mounting base DESCRIPTION 1 3 MBK905 Fig.1 Simplified outline (SOT538A). QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Pulsed class-AB; tp = 50 µs; δ = 2% ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BLA1011-2 − DESCRIPTION ceramic surface mounted package; 2 leads VERSION SOT538A f (MHz) 1030 to 1090 VDS (V) 36 PL (W) 2 Gp (dB) >16 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Th ≤ 25 °C CONDITIONS − − − − −65 − MIN. MAX. 75 ±15 2.2 10 +150 200 V V A W °C °C UNIT 2003 Nov 19 2 Philips Semiconduc...