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MBR1100

Shanghai SIM-BCD Semiconductor
Part Number MBR1100
Manufacturer Shanghai SIM-BCD Semiconductor
Description SCHOTTKY BARRIER RECTIFIER
Published Oct 20, 2005
Detailed Description MBR 1100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Volt...
Datasheet PDF File MBR1100 PDF File

MBR1100
MBR1100

Overview
MBR 1100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.
5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR1100 (RSingle ¡õ Dual) Anode Spec.
Limit 100 1 0.
755 0.
725 Die Sort 107 UNIT Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.
015 0.
010 mA pF 52 -50 to +150 -50 to +150 Amp ¡æ ¡æ Specification apply to ...


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