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MBR1100 Dataheets PDF



Part Number MBR1100
Manufacturers International Rectifier
Logo International Rectifier
Description SCHOTTKY BARRIER RECTIFIER
Datasheet MBR1100 DatasheetMBR1100 Datasheet (PDF)

Bulletin PD-20587 rev. B 03/03 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1 Apk, TJ = 125°C range Description/ Features The MBR1100 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Low profile, axial leaded outlin.

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Bulletin PD-20587 rev. B 03/03 MBR1100 SCHOTTKY RECTIFIER 1.0 Amp Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM IFSM @ tp = 5 µs sine VF TJ @ 1 Apk, TJ = 125°C range Description/ Features The MBR1100 axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. Low profile, axial leaded outline High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability MBR1100 Units 1.0 100 200 0.68 - 40 to 150 A V A V °C CASE STYLE AND DIMENSIONS Conform to JEDEC Outline DO-204AL (DO-41) Dimensions in millimeters and inches www.irf.com 1 MBR1100 Bulletin PD-20587 rev. B 03/03 Voltage Ratings Part number VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V) MBR1100 100 Absolute Maximum Ratings Parameters IF(AV) Max. Average Forward Current * See Fig. 4 IFSM EAS IAR Max. Peak One Cycle Non-Repetitive Surge Current * See Fig. 6 Non-Repetitive Avalanche Energy Repetitive Avalanche Current 200 50 1.0 0.5 A mJ A 5µs Sine or 3µs Rect. pulse Following any rated load condition and with 10ms Sine or 6ms Rect. pulse rated VRRM applied Value 10 Units A Conditions 50% duty cycle @ TC = 85°C, rectangular wave form TJ = 25 °C, IAS = 0.5 Amps, L = 8 mH Current decaying linearly to zero in 1 µsec Frequency limited by TJ max. VA = 1.5 x VR typical Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) Value 0.85 0.96 0.68 0.78 0.5 1.0 35 8.0 10000 Units V V V V mA mA pF nH @ 1A @ 2A @ 1A @ 2A Conditions TJ = 25 °C TJ = 125 °C VR = rated VR IRM CT LS Max. Reverse Leakage Current * See Fig. 2 Typical Junction Capacitance Typical Series Inductance (1) T J = 25 °C T J = 125 °C V R = 5VDC, (test signal range 100Khz to 1Mhz) 25°C Measured lead to lead 5mm from package body dv/dt Max. Voltage Rate of Change (1) Pulse Width < 300µs, Duty Cycle <2% V/ µs (Rated VR) Thermal-Mechanical Specifications Parameters TJ Tstg Max. Junction Temperature Range(*) Max. Storage Temperature Range Value -40 to 150 -40 to 150 80 Units °C °C Conditions RthJL Max. Thermal Resistance Junction to Lead (**) wt Approximate Weight Case Style (*) dPtot °C/W DC operation (* See Fig. 4) 0.33(0.012) g (oz.) DO-204AL(DO-41) 1 < thermal runaway condition for a diode on its own heatsink dTj Rth( j-a) (**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from Package 2 www.irf.com MBR1100 Bulletin PD-20587 rev. B 03/03 10 Reverse Current - I R (mA) 10 1 0.1 T J = 150˚C 125˚C 0.01 0.001 25˚C 0.0001 0 0 20 40 60 80 100 Instantaneous Forward Current - IF (A) TJ = 150˚C TJ = 125˚C Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reve.


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