STS3DPF20V

DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8 STripFET™ POWER MOSFET TYPE STS3DPF20L s s s STS3DPF20V VDSS 20 V RDS(on) <0.11 Ω ID 3A s TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.1 Ω @ 2.7 V STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) SO-8 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s MOBILE PHONE APPLICATIONS INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Single Operation Drain Current (continuous) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 12 3 1.9 12 1.6 2 Unit V V V A A A W W () Pulse width limited by safe operating area. June 2002 . Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/8 STS3DPF20V THERMAL DATA Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operation ...