P-CHANNEL 45V - 0.080 Ω - 3A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY ...
P-CHANNEL 45V - 0.080 Ω - 3A SO-8 STripFET™ MOSFET PLUS
SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS MOSFET
SCHOTTKY VDSS 45 V IF(AV) 3A RDS(on) < 0.11 Ω VRRM 45 V ID 3A VF(MAX) 0.51 V
STS3DPFS45
DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop
Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot Parameter Dain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 45 45 ± 16 3 1.9 12 2 Unit V V V A A A W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM
dv/dt
Parameter Repetitive Peak Reverse Voltage RMS Forward Curren Average Forward Current Surge Non Repetitive Forward Current Repetitive Peak Reverse Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL=125 oC δ =0.5 tp= 10 ms Sinusoidal tp=2 µs F=1 kHz tp=100 µs
Value 45 20 3 75 1 1 10000
Unit V A A A A A V/µs
() Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
February 2002
.
1/8
STS3DPFS45
TERMAL DATA
Rthj-amb Rthj-amb Tstg Tj Thermal Re...