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C30637 Dataheets PDF



Part Number C30637
Manufacturers Perkin Elmer Optoelectronics
Logo Perkin Elmer Optoelectronics
Description (C306xx) High Speed InGaAs PIN
Datasheet C30637 DatasheetC30637 Datasheet (PDF)

D A T A S H E E T Lighting Imaging Telecom InGaAs PIN Photodiodes High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes Description These high-speed InGaAs photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems and high-speed receiver applications including trunk l i n e , L A N , f i b e r- i n - t h e - l o o p a n d data communications. Ceramic submount packages are available for easy integration into highs p e e d S O N .

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D A T A S H E E T Lighting Imaging Telecom InGaAs PIN Photodiodes High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes Description These high-speed InGaAs photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems and high-speed receiver applications including trunk l i n e , L A N , f i b e r- i n - t h e - l o o p a n d data communications. Ceramic submount packages are available for easy integration into highs p e e d S O N E T, F D D I , d a t a l i n k receiver modules, or as backfacet power monitors in laser d i o d e m o d u l e s . Av a i l a b l e i n hermetic TO-18 packages, fibered packages, or in connectorized receptacle packages with i n d u s t r y s t a n d a r d S T, F C o r S C connectors, these photodiodes are designed to function with either single or multimode fibers. Receptacled and fibered packages use a ball-lens TO-18 package to maximize coupling e f f i c i e n c y. A l l d e v i c e s a r e p l a n a r passivated and feature proven high reliability mounting and contacting. An MTTF of >109 hours (approximately 105 years) at 50˚ C has been demonstrated to d a t e f r o m standard production samples. Certified to meet ISO 9001, PerkinElmer Optoelectronics is committed to supplying the highest quality products to our customers . This series of receiver modules comply to MIL-Q-9858A and AQAP-1 quality standards. Process control is maintained through annual requalification of production units and includes extensive electrical, thermal and mechanical stress, as well as an extended life test. Additionally, every wafer lot is individually qualified to meet responsivity, capacitance and dark current specifications. Reliability is demonstrated with an extended high temperature burn-in at 200˚ C for 168 hours (VR=10V), ensuring an MTTF > 107 hours at 50˚C (EA=0.7eV). Finally, all production devices are screened with a 16 hour, 200˚C burn-in (VR = 10V) and tested to meet responsivity, spectral noise and dark current specifications. Applications • High-speed communications • SONET/ATM, FDDI • Datalinks and LANs Features • 50, 75, 100, 350 µm diameters • High responsivity at 1300 and 1550 nm • Low capacitance for high bandwidths (to 3.5 GHz) • Available in various packages www.perkinelmer.com/opto C30616, C30637, C30617, C30618 Specifications (at V R =V op typical), 22˚ C PARAMETER C30616 Min Typ Max C30637 Min 1 25 Units Max 10 V V µm A/W A/W 2.0 0.15 0.60 0.5 nA pA/√Hz pF ns GHz Typ 5 60 75 Operating voltage Breakdown voltage Active diameter Responsivity at 1300 nm Ceramic (Fig. 1) Responsivity at 1550 nm Ceramic (Fig. 1) Dark current Spectral noise current (10 kHz, 1.0 Hz) Capacitance at VR = VOP (typ) Ceramic (Fig. 1) Rise-and-fall time (10% to 90%) Bandwidth (-3 dB, RL = 50Ω ) Available package types: See corresponding figures. 1 25 5 60 50 10 0.80 0.85 0.90 0.95 <1.0 2.0 0.80 0.85 0.90 0.95 <1.0 <0.02 0.40 0.07 <0.02 0.15 0.35 0.07 2.5 3.5 1 0.55 0.5 2.5 3.5 1 Maximum Ratings Min Maximum forward current Power dissipation Storage temperature Operating temperature -60 -40 Typ Max 10 100 125 125 Min Typ Max 10 100 Units mA mW ˚C ˚C -60 -40 125 125 01-013:150202/2 www.perkinelmer.com/opto C30616, C30637, C30617, C30618 Specifications (at V R =V op typical), 22˚ C PARAMETER C30617 Min Typ Max C30618 Min 1 25 Units Max 10 V V µm Typ 5 60 350 Operating voltage Breakdown voltage Active diameter Responsivity at 1300 nm: Ceramic (Fig. 1)/ TO - 18 (Fig. 3) Fiber (Fig. 7)ST, FC, SC Receptacles (Fig. 4, 5 & 6) 1 Responsivity at 1550 nm : Ceramic (Fig.1)/TO-18 (Fig. 3) Fiber (Fig. 7)/ST, FC, SC Receptacles (Fig. 4, 5 & 6) 1 Dark current Spectral noise current (10 kHz, 1.0 Hz) Capacitance at VR = VOP (typ) Figures 1,3,4,5,6 & 7 TO-18 (Fig. 3) Rise-and-Fall time (10% to 90%) Bandwidth (-3 dB, RL = 50Ω ) Available package types: See corresponding figures 1 25 5 60 100 10 0.80 0.65 0.90 0.75 0.80 0.65 0.90 0.75 A/W 0.85 0.70 0.95 0.80 <1.0 <0.02 2.0 0.15 0.85 0.70 0.95 0.80 2.0 0.02 5.0 0.20 A/W nA pA/√Hz 0.6 0.8 0.07 2.0 3.5 0.8 1.0 0.5 4.0 4.0 0.5 0.75 6.0 6.0 1.0 pF pF ns GHz 1,3,4,5,6,7 2,4,5,6 Maximum Ratings Min Maximum forward current Power dissipation Storage temperature 2 Operating temperature 2 -60 -40 Typ Max 10 100 125 125 -60 -40 Min Typ Max 10 100 125 125 Units mA mW ˚C ˚C Note 1. Coupled from 62.5 µm, 0.28 NA graded index multi-mode fiber using 1300 nm SLED source. Responsivity is 10% higher with 9µm fiber. Note 2. Maximum storage and operating temperature for connectorized and fibered devices is +85˚ C 01-013:150202/3 www.perkinelmer.com/opto C30616, C30637, C30617, C30618 Standard Packages Figure 1: Ceramic Submount 3.20 1.60 0.013 0.11 Figure 2: TO-18 Flat Window Photodiode Reference *PHOTODIODE REFERENCE Plane PLANE 1.55 *1.55 1.00 3.89 3.89 GOLD 3.91 3.91 4.70 4.70 5.41 5.41 12.7 MIN 12.7 MIN 1.70 2.70 0.25 1.27 1.27 PIN 1: CATHODE PIN 1: CATHODE.


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