N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
TYPE STP16NF06L STP60NF06LFP
s s s s
STP16NF06L ...
N-CHANNEL 60V - 0.07 Ω - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET
TYPE STP16NF06L STP60NF06LFP
s s s s
STP16NF06L STP16NF06LFP
VDSS 60 V 60 V
RDS(on) <0.09 Ω <0.09 Ω
ID 16 A 11 A
TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE
1 2
3
1 2
3
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 TO-220FP
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM() Ptot dv/dt (1) EAS (2) VISO Tstg Tj Parameter STP16NF06L Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature 16 11 64 45 0.3 23 127 --------55 to 175 2500 60 60 ± 16 11(*) 7.5(*) 44(*) 25 0.17 Value STP16NF06LFP V V V A A A W W/°C V/ns mJ V °C Unit
() Pulse wid...